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NTE2908 - N-Channel MOSFET

Description

The NTE2908 is a Power MOSFET in a TO 220 type package that utilizes advanced processing techniques to achieve extremely low on

resistance per silicon area.

Features

  • D Ultra Low ON.
  • Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +25C.
  • . +100C . . . . . . (V. . G. S. = . . . . 10V), . ID. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202A.

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Datasheet Details

Part number NTE2908
Manufacturer NTE Electronics (defunct)
File Size 81.23 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2908 Datasheet

Full PDF Text Transcription

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NTE2908 MOSFET N−Channel, Enhancement Mode High Speed Switch TO−220 Type Package Description: The NTE2908 is a Power MOSFET in a TO−220 type package that utilizes advanced processing techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications. D Features: D Ultra Low ON−Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated G S Absolute Maximum Ratings: Continuous TTCC = = Drain Current +25C . . . . . . +100C . . . . . .(V. .G.S. ..... = .. .. 10V), ..... ..... .ID. . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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