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NTE2906 - N-Channel MOSFET

Features

  • D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode D G S Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain.
  • Source Voltage, VDSX.
  • . 200V Gate.
  • Source Voltage, VGSS.
  • . +14V Continuous Drain Current, ID.

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Datasheet Details

Part number NTE2906
Manufacturer NTE Electronics (defunct)
File Size 68.03 KB
Description N-Channel MOSFET
Datasheet download datasheet NTE2906 Datasheet

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Full PDF Text Transcription

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NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch (Compl to NTE2998) TO3 Type Package Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection Diode D G S Absolute Maximum Ratings: (TC = +255C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +14V Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Body Drain Diode, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . .
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