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NTE29 - Silicon Complementary Transistors

Description

The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications.

Features

  • D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.
  • . . 80V Emitter.

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Datasheet Details

Part number NTE29
Manufacturer NTE Electronics (defunct)
File Size 24.22 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE29 Datasheet

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Full PDF Text Transcription

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NTE29 (NPN) & NTE30 (PNP) Silicon Complementary Transistors High Power, High Current Switch Description: The NTE29 (NPN) and NTE30 (PNP) are compelmentary power transistors in a TO3 type case designed for use in high power amplifier and switching circuit applications. Features: D High Current Capability: IC = 50A (Continuous) D DC Current Gain: hFE= 15 to 60 @ IC = 25A D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ IC = 25A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . .
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