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NTE2531 - Silicon Complementary Transistors

Download the NTE2531 datasheet PDF. This datasheet also covers the NTE2530 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Features

  • D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO.
  • 400V Collector Emitter Voltage, VCEO.
  • . . . 400V Emitter Base Voltage, VEBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE2530_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE2531
Manufacturer NTE Electronics (defunct)
File Size 23.25 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE2531 Datasheet

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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE253 Silicon Complementary Transistors
NTE2530 Silicon Complementary Transistors
NTE2532 Integrated Circuit NMOS
NTE2533 Silicon NPN Transistor
NTE2534 Silicon Complementary Transistors

Full PDF Text Transcription

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NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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