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NTE253 - Silicon Complementary Transistors

Description

The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general purpose amplifier and low

speed switching applications.

Features

  • D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built.
  • In Base.
  • Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number NTE253
Manufacturer NTE Electronics (defunct)
File Size 24.82 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE253 Datasheet

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Full PDF Text Transcription

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NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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