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NTE249 - Silicon Complementary Transistors

Description

The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

Features

  • D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.
  • . 100V Emitter.
  • Base Voltage, VEB.

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Datasheet Details

Part number NTE249
Manufacturer NTE Electronics (defunct)
File Size 25.18 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE249 Datasheet

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Full PDF Text Transcription

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NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . .
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