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NTE240 - Silicon Complementary Transistors

Download the NTE240 datasheet PDF. This datasheet also covers the NTE191 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high

voltage video and luminance output stages in TV receivers.

Features

  • D High Collector.
  • Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector.
  • Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 300V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE191_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE240
Manufacturer NTE Electronics (defunct)
File Size 23.92 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE240 Datasheet

Full PDF Text Transcription

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NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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