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NTE246 - Silicon Complementary Transistors

Download the NTE246 datasheet PDF. This datasheet also covers the NTE245 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications.

Features

  • D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCB.
  • . . 80V Emitter.
  • Base Voltage, VEB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE245_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE246
Manufacturer NTE Electronics (defunct)
File Size 25.07 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE246 Datasheet

Full PDF Text Transcription

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NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . .
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