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NTE244 - Silicon Complementary Transistors

Download the NTE244 datasheet PDF. This datasheet also covers the NTE243 variant, as both devices belong to the same silicon complementary transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low

frequency switching applications.

Features

  • D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Bas.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NTE243_NTEElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NTE244
Manufacturer NTE Electronics (defunct)
File Size 26.51 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE244 Datasheet

📁 Similar Datasheet

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NTE2004 (NTExxxx) Linear Integrated Circuits NTE Electronics
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Other Datasheets by NTE Electronics (defunct)

Part Number Description
NTE24 Silicon Complementary Transistors
NTE240 Silicon Complementary Transistors
NTE2401 Silicon PNP Transistor
NTE2402 Silicon Complementary Transistors
NTE2403 Silicon Complementary Transistors

Full PDF Text Transcription

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NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . .
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