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NTE243 - Silicon Complementary Transistors

Description

The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low

frequency switching applications.

Features

  • D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base.

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Datasheet Details

Part number NTE243
Manufacturer NTE Electronics (defunct)
File Size 26.51 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE243 Datasheet

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Full PDF Text Transcription

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NTE243 (NPN) & NTE244 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 4A D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4A = 3V Max @ IC = 8A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . .
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