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NTE2388 - N-CHANNEL MOSFET

Description

The NTE2388 is an N

Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features

  • D Silicon Gate for Fast Switching Speeds D Low rDS(on) to Minimize On.
  • Losses. Specified at Elevated Temperatures. D Rugged.
  • SOA is Power Dissipation Limited D Source.
  • to.
  • Drain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: Drain.
  • Source Voltage, VDSS.
  • . 200V Drain.
  • Gate Voltage (RGS = 20kΩ), VDGR.

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Datasheet Details

Part number NTE2388
Manufacturer NTE Electronics (defunct)
File Size 26.51 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet NTE2388 Datasheet

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Full PDF Text Transcription

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NTE2388 MOSFET N–Channel Enhancement Mode, High Speed Switch Description: The NTE2388 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220 type package designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Low rDS(on) to Minimize On–Losses. Specified at Elevated Temperatures. D Rugged – SOA is Power Dissipation Limited D Source–to–Drain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . .
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