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NTE2383 - P-CHANNEL MOSFET

Description

The NTE2383 is a MOS power P

Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features

  • D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain.
  • Source Voltage (Note 1), VDSS.
  • . . . 100V Drain.
  • Gate Voltage (RGS = 1MΩ, Note 1), VDGR.
  • . . . 100V G.

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Datasheet Details

Part number NTE2383
Manufacturer NTE Electronics (defunct)
File Size 25.96 KB
Description P-CHANNEL MOSFET
Datasheet download datasheet NTE2383 Datasheet

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Full PDF Text Transcription

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NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch (Compl to NTE2382) Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Rugged Polysilicon Gate Cell Structure D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximim Ratings: Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain–Gate Voltage (RGS = 1MΩ, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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