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NTE2319 - Silicon NPN Transistor

Description

The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

operated switchmode applications.

Features

  • D Fast Turn.
  • On Times @ TC = +100°C: Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ D 100°C Performance Specified for: Reverse.
  • Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current.

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Datasheet Details

Part number NTE2319
Manufacturer NTE Electronics (defunct)
File Size 26.40 KB
Description Silicon NPN Transistor
Datasheet download datasheet NTE2319 Datasheet

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Full PDF Text Transcription

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NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode applications. Features: D Fast Turn–On Times @ TC = +100°C: Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ D 100°C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current Applications: D Switching Regulators D Inverters D Solenoids D Relay Drivers D Motor Controls D Deflection Circuits Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . .
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