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NTE65101 - Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)

Description

The NTE65101 is a CMOS 1024 bit device organized in 256 words by 4 bits in a 22

Lead DIP type package.

This device offers ultra low power and fully static operation with a single 5V supply.

oriented syst

Features

  • D Organized as 256 Bytes of 4.
  • Bits D Static Operation D Low Standby Power D Three.
  • State Output D Single 5V Power Supply D Data Retention to 2V D TTL Compatible D Maximum Access Time: 450ns Absolute Maximum Ratings: (Voltages referenced to VSS Pin8) Supply Voltage, VCC.
  • .
  • 0.5 to +7V Input Voltage, Vin.

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Datasheet Details

Part number NTE65101
Manufacturer NTE Electronics (defunct)
File Size 30.81 KB
Description Integrated Circuit 256 x 4-Bit Static Random Access Memory (SRAM)
Datasheet download datasheet NTE65101 Datasheet

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Full PDF Text Transcription

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NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory (SRAM) Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data retention at a power supply as low as 2V over temperature readily allows design into applications using battery backup for nonvolatility. The NTE65101 is fully static and does not require clocking in standby mode.
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