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NSD2621A - Half-bridge GaN Driver

Description

7.1.

OVERVIEW10 7.2.

UNDER VOLTAGE LOCK OUT (UVLO)10 7.3.

Features

  • 700V Half-bridge Gate Drivers.
  • Integrated High-side and Low-side Output Regulators.
  • UVLO protection on low side and high side.
  • Source/Sink Current: 2A/ 4A.
  • Propagation Delay: 30ns TYP.
  • Short switching delay and mismatch.
  • Independent turn-on and turn-off adjustable.
  • Programmable Deadtime from 20ns to 100ns.
  • Allowable SW slew rate: 150V/ns.
  • Operating Temperature: -40~125°C.
  • RoHS & REACH Compliance.
  • Lead-free component, suitable for lead-.

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Full PDF Text Transcription

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NSD2621X Half-bridge GaN Driver Datasheet (EN) 1.3 Product Overview NSD2621X is an integrated half-bridge gate driver which is designed for GaN HEMT. The driver operates with a wide supply voltage from 10V to 18V, while internal regulator could offer stable driver voltage to keep GaN FET safe. The undervoltage lock-out (UVLO) protection feature is provided in low side and high side drivers to prevent the GaN FET from operating in low efficiency or dangerous conditions The programmable dead-time control function has been provided. The adjustable dead-time range is from 20ns to 100ns. The device operates in the industrial temperature range, -40°C to 125°C, and is available in a compact 4.0 x 4.0 mm QFN package.
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