High Breakdown Voltage-
: VCBO= 1500V (Min)
High Switching Speed
High Reliability
APPLICATIONS
Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
1500
V
VOEO
Full PDF Text Transcription for KSD5074 (Reference)
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KSD5074. For precise diagrams, and layout, please refer to the original PDF.
cSzmi-Conductoi ^Pi 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , {Jnc. Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • Hi...
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nsistor DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VOEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V lo Collector Current- Continuous 2.5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 10 A 50 W 150 •c Tstg Storage Temperature Range -55-150 •c TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 KSD5074 f i 2 :• pIN 1.BASE 2. COLLECT
KSD5074 Datasheet
