KSD5072 - Silicon NPN Power Transistor

NJS

General Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability

B .

jo « k

PIN 1.BASE 2.

COLLECTOR 3.

Designed for color TV horizontal o

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KSD5072 silicon npn power transistor by NJS - Datasheet Preview

Datasheet Details

Part number	KSD5072
Manufacturer	NJS
File Size	63.90 KB
Description	Silicon NPN Power Transistor
Datasheet	KSD5072 Datasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Line.. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor KSD5072 DESCRIPTION • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode B . ,. 2 •jo—« k ¥ TI^LJ PIN 1.BASE 2. COLLECTOR 3. EMITTER TO-3PML package APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V' VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 5 A ICP Collector Current-Peak Collector Power Dissipation PC @ TC=25'C Tj Junction Temperature 16 A 60 W 150 .