PD5G3EA - P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the PD5G3EA datasheet PDF. This datasheet also covers the PD5G3EA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Pb.
Free, Halogen Free and RoHS compliant.
Low RDS(on) to Minimize Conduction Losses.
Ohmic Region Good RDS(on) Ratio.
Optimized Gate Charge to Minimize Switching Losses.
Products Integrated ESD diode with ESD Protected.

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PD5G3EA p-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PD5G3EA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PD5G3EA
Manufacturer	NIKO-SEM
File Size	230.04 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	PD5G3EA Datasheet

Other Datasheets by NIKO-SEM

Part Number	Description
PD5C1BA	P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Enhancement Mode PD5G3EA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 8mΩ ID -81A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • Products Integrated ESD diode with ESD Protected. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. 1. GATE 2. DRAIN 3.