PD5C1BA - P-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM

Download the PD5C1BA datasheet PDF. This datasheet also covers the PD5C1BA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Pb.
Free, Halogen Free and RoHS compliant.
Low RDS(on) to Minimize Conduction Losses.
Ohmic Region Good RDS(on) Ratio.
Optimized Gate Charge to Minimize Switching Losses.

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PD5C1BA p-channel enhancement mode field effect transistor by NIKO-SEM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (PD5C1BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	PD5C1BA
Manufacturer	NIKO-SEM
File Size	341.71 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	PD5C1BA Datasheet

More Datasheets from NIKO-SEM

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PD5G3EA	P-Channel Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM P-Channel Enhancement Mode PD5C1BA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 5.6mΩ ID -88A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.