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PD5C1BA - P-Channel Enhancement Mode Field Effect Transistor

Download the PD5C1BA datasheet PDF. This datasheet also covers the PD5C1BA-NIKO variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD5C1BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PD5C1BA
Manufacturer NIKO-SEM
File Size 341.71 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PD5C1BA Datasheet

Full PDF Text Transcription for PD5C1BA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PD5C1BA. For precise diagrams, and layout, please refer to the original PDF.

NIKO-SEM P-Channel Enhancement Mode PD5C1BA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 5.6mΩ ID -88A Features • Pb−Free...

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PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 5.6mΩ ID -88A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. Applications • Protection Circuits Applications. • Logic/Load Switch Circuits Applications. D G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature

More Datasheets from NIKO-SEM

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