P2206BT - N-Channel Transistor

This page provides the datasheet information for the P2206BT, a member of the P2206BT-NIKO N-Channel Transistor family.

NIKO-SEM

Datasheet Details

Part number	P2206BT
Manufacturer	NIKO-SEM
File Size	274.67 KB
Description	N-Channel Transistor
Datasheet	P2206BT Datasheet
Additional preview pages of the P2206BT datasheet.

📁 Similar Datasheet

P2206BT - N-Channel MOSFET (UNIKC)
P2206BTF - N-Channel MOSFET (UNIKC)
P2206BD - N-Channel Transistor (UNIKC)
P2206BK - N-Channel MOSFET (UNIKC)
P2200AA61L - SIDACtor Device (Littelfuse)
P2202AA - SIDACtor Protection Thyristors (Littelfuse)
P2202AB - SIDACtor Protection Thyristors (Littelfuse)
P2202AC - SIDACtor Protection Thyristors (Littelfuse)
P2202ACMC - SIDACtor Protection Thyristors (Littelfuse)
P2202CAL - Compak TwinCHIP SIDACtor Device (Littelfuse)

Other Datasheets by NIKO-SEM

P2206BTF - N-Channel Transistor
P2206BD - N-Channel Enhancement Mode Field Effect Transistor
P2206BK - N-Channel MOSFET
P2203BEB - N-Channel Field Effect Transistor

Full PDF Text Transcription

Click to expand full text

NIKO-SEM N-Channel Enhancement Mode P2206BT Field Effect Transistor TO-220 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ ID 35A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 ° C TC = 100 ° C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 ° C TC = 100 ° C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 1. GATE 2. DRAIN 3. SOURCE LIMITS 60 ±20 35 22 100 26 33.8 62.

Published: Feb 1, 2017 |