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P2206BD - N-Channel Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the P2206BD, a member of the P2206BD-NIKO N-Channel Enhancement Mode Field Effect Transistor family.

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Datasheet Details

Part number P2206BD
Manufacturer NIKO-SEM
File Size 365.65 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P2206BD Datasheet
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Full PDF Text Transcription

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NIKO-SEM N-Channel Enhancement Mode P2206BD Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 22.5mΩ ID 32A D G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 100 °C VDS VGS ID IDM IAS EAS PD TJ, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RJC Junction-to-Ambient RJA 1Pulse width limited by maximum junction temperature. TYPICAL 1. GATE 2. DRAIN 3. SOURCE LIMITS 60 ±20 32 20 100 26 33.
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