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S7A403630M - 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM

Description

The S7A403630M and S7A401830M are 4,718,592-bit Synchronous Static Random Access Memory designed for high performance.

Features

  • VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply.
  • VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or 2.3V~3.5V I/O Power Supply (VDD=3.3V).
  • Synchronous Operation.
  • 2 Stage Pipelined operation with 4 Burst.
  • On-Chip Address Counter.
  • Self-Timed Write Cycle.
  • On-Chip Address and Control Registers.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • Power Down State via ZZ Signal.

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Datasheet Details

Part number S7A403630M
Manufacturer NETSOL
File Size 473.62 KB
Description 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM
Datasheet download datasheet S7A403630M Datasheet

Full PDF Text Transcription

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SSSS7777AAAA444400001331866833330000MMMM 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM 128Kx36 & 256Kx18 Sync-Pipelined Burst SRAM 4Mb Sync. Pipelined Burst SRAM Specification NETSOL RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of NETSOL. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
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