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UPA812T - HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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NEC

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UPA812T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – UPA812T

Datasheet Details

Part number	UPA812T
Manufacturer	NEC
File Size	50.06 KB
Description	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	UPA812T Datasheet
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Product details

Features

Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA 0.65 0.65.
High Gain 1.3 |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
A Small Mini Mold Package Adopted.
Built-in 2 Transistors (2 × 2SC4227) 2.0±0.2 2 3.

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Published: Apr 17, 2005 |