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UPA810TC - NPN SILICON EPITAXIAL TRANSISTOR

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NEC

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UPA810TC NPN SILICON EPITAXIAL TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – UPA810TC

Datasheet Details

Part number	UPA810TC
Manufacturer	NEC
File Size	53.62 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	UPA810TC Datasheet
Additional preview pages of the UPA810TC datasheet.

Product details

Description

The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band.

Features

Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
Flat-lead 6-pin thin-type ultra super minimold.
Built-in 2 transistors (2 × 2SC5006).

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Published: Apr 17, 2005 |