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PRELIMINARY DATA SHEET
GaAs MES FET
15 W C-BAND POWER GaAs FET NEZ SERIES
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.
PACKAGE DIMENSIONS (unit: mm)
0.5 ±0.1
2.5 MIN.
C1.0 4PLACES R1.2 4PLACES
SOURCE GATE
2.4 5.6
17.4 ±0.2
8.0 ±0.1
DRAIN 20.4 ±0.2
2.5 MIN.