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NEZ1011-2E - 2W X / Ku-BAND POWER GaAs MESFET

Description

The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band.

The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit.

Features

  • High Output Power : Po (1 dB) = +34.0 dBm typ.
  • High Linear Gain.
  • High Efficiency : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E) : 30 % typ.
  • Input and Output Internally Matched for Optimum performance.

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Datasheet Details

Part number NEZ1011-2E
Manufacturer NEC
File Size 81.78 KB
Description 2W X / Ku-BAND POWER GaAs MESFET
Datasheet download datasheet NEZ1011-2E Datasheet

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Full PDF Text Transcription

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DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability. FEATURES • High Output Power : Po (1 dB) = +34.0 dBm typ. • High Linear Gain • High Efficiency : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E) : 30 % typ.
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