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NESG210833 - NPN SiGe RF TRANSISTOR

Features

  • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz.
  • PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz.
  • OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz.
  • Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz.
  • SiGe HBT technology (UHS2) : fT = 15.5 GHz.
  • 3-pin minimo.

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Datasheet Details

Part number NESG210833
Manufacturer NEC
File Size 121.28 KB
Description NPN SiGe RF TRANSISTOR
Datasheet download datasheet NESG210833 Datasheet

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Full PDF Text Transcription

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DATA SHEET www.DataSheet4U.com NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG) FEATURES • The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz • PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz • OIP3 = 31 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz • Maximum stable power gain: MSG =16.0 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz • SiGe HBT technology (UHS2) : fT = 15.
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