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NESG2021M16 - HIGH FREQUENCY TRANSISTOR

Description

NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators.

Features

  • HIGH.

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Datasheet Details

Part number NESG2021M16
Manufacturer CEL
File Size 79.55 KB
Description HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NESG2021M16 Datasheet

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2021M16 FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz • LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 DESCRIPTION NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE NESG2021M16 M16 DC RF SYMBOLS NF Ga NF Ga MSG |S21E|2 P1dB OIP3 fT Cre ICBO IEBO hFE PARAMETERS AND CONDITIONS UNITS Noise Figure at VCE = 2 V, IC = 3 mA, f = 5.
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