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NE961R500 - 0.5 W X / Ku-BAND POWER GaAs MES FET

Description

The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems.

Features

  • High Output Power.
  • High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP.
  • High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz.

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Datasheet Details

Part number NE961R500
Manufacturer NEC
File Size 62.17 KB
Description 0.5 W X / Ku-BAND POWER GaAs MES FET
Datasheet download datasheet NE961R500 Datasheet

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Other Datasheets by NEC
  • NE961R200 - 0.2 W X / Ku-BAND POWER GaAs MES FET
  • NE960R2 - 0.2 W X / Ku-BAND POWER GaAs MES FET
  • NE960R200 - 0.2 W X / Ku-BAND POWER GaAs MES FET
  • NE960R275 - 0.2 W X / Ku-BAND POWER GaAs MES FET
  • NE960R5 - 0.5 W X / Ku-BAND POWER GaAs MES FET
  • NE960R500 - 0.5 W X / Ku-BAND POWER GaAs MES FET
  • NE960R575 - 0.5 W X / Ku-BAND POWER GaAs MES FET
  • NE962R575 - 0.5 W X / Ku-BAND POWER GaAs MES FET

Full PDF Text Transcription

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application.
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