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NE960R275 - 0.2 W X / Ku-BAND POWER GaAs MES FET

Description

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems.

Features

  • High Output Power.
  • High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP.
  • High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz.

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Datasheet Details

Part number NE960R275
Manufacturer NEC
File Size 62.85 KB
Description 0.2 W X / Ku-BAND POWER GaAs MES FET
Datasheet download datasheet NE960R275 Datasheet

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Other Datasheets by NEC
  • NE960R2 - 0.2 W X / Ku-BAND POWER GaAs MES FET
  • NE960R200 - 0.2 W X / Ku-BAND POWER GaAs MES FET
  • NE960R5 - 0.5 W X / Ku-BAND POWER GaAs MES FET
  • NE960R500 - 0.5 W X / Ku-BAND POWER GaAs MES FET
  • NE960R575 - 0.5 W X / Ku-BAND POWER GaAs MES FET
  • NE961R200 - 0.2 W X / Ku-BAND POWER GaAs MES FET
  • NE961R500 - 0.5 W X / Ku-BAND POWER GaAs MES FET
  • NE962R575 - 0.5 W X / Ku-BAND POWER GaAs MES FET

Full PDF Text Transcription

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
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