Click to expand full text
GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25139
Power DISCONTINU Gain,GPSE (dB) D Noise Figure, NF (dB)
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER
• LOW CRSS: 0.02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package.
POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE
GPS
20
10
VG2S = 1 V VG2S = 0.
NE25139 Datasheet
