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NE25118 - DUAL-GATE GaAS MESFET

Description

The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier.

As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs.

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Datasheet Details

Part number NE25118
Manufacturer NEC
File Size 45.85 KB
Description DUAL-GATE GaAS MESFET
Datasheet download datasheet NE25118 Datasheet

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Full PDF Text Transcription

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GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK • LOW PACKAGE HEIGHT: 1.0 mm MAX Power Gain, GPS (dB) 20 NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V 10 ID = 10 mA f = 900 MHz 5 NF 0 0 0 5 10 DESCRIPTION The NE25118 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs.
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