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2SK2359 - N-Channel MOSFET

General Description

10.6 MAX.

5.9 MIN.

12.7 MIN.

Key Features

  • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) 4 1 2 3 6.0 MAX.
  • Low Ciss Ciss = 1050 pF TYP.
  • High Avalanche Capability Ratings.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2353 N-Channel MOSFET
2SK2354 N-Channel MOSFET
2SK2355 N-Channel MOSFET
2SK2355-Z N-Channel MOSFET
2SK2356 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. applications. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) 4 1 2 3 6.0 MAX. • Low Ciss Ciss = 1050 pF TYP.