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2SK2353 - N-Channel MOSFET

General Description

The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

10.0 ±0.3.

Key Features

  • Low On-Resistance 2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A).
  • Low Ciss Ciss = 670 pF TYP.
  • High Avalanche Capability Ratings.
  • Isolate TO-220 Package.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2354 N-Channel MOSFET
2SK2355 N-Channel MOSFET
2SK2355-Z N-Channel MOSFET
2SK2356 N-Channel MOSFET
2SK2356-Z N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3. 3.2 ±0.2 2.7 ±0.2 4.5 ±0.2 FEATURES • Low On-Resistance 2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A) 2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 670 pF TYP. • High Avalanche Capability Ratings • Isolate TO-220 Package QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 15.0 ±0.3 4 ±0.2 0.7 ±0.1 2.54 1.3 ±0.