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2SK2358 - N-Channel MOSFET

General Description

The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A) 15.0 ±0.3 2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A).
  • Low Ciss Ciss = 1050 pF TYP.
  • High Avalanche Capability Ratings.
  • Isolate TO-220 Package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance 2SK2357: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 3.0 A) 15.0 ±0.3 2SK2358: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 3.0 A) • Low Ciss Ciss = 1050 pF TYP.