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2SK2341 - Silicon N-Channel Power MOSFET

General Description

The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • φ3.2 ± 0.2.
  • Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 High Avalanche Capability Ratings Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse).
  • 250 ± 30 ± 11 ± 44 35 2.0.
  • 55 to +150 150 11 320 V V A A W W °C °C A mJ 1 2 3 0.7 ± 0.1 2.54 TYP. 13.5 MIN. 0.65 ± 0.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ± 0.3 4.5 ± 0.2 2.7 ± 0.2 FEATURES φ3.2 ± 0.2 • • • Low On-state Resistance RDS(on) = 0.26 Ω MAX. (VGS = 10 V, ID = 6.0 A) 3 ± 0.1 1 2 3 4 ± 0.2 High Avalanche Capability Ratings Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) VDSS VGSS ID (DC) ID (pulse)* 250 ± 30 ± 11 ± 44 35 2.0 –55 to +150 150 11 320 V V A A W W °C °C A mJ 1 2 3 0.7 ± 0.1 2.54 TYP. 13.5 MIN. 0.65 ± 0.