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NCEP065N12AGU - N-Channel Super Trench II Power MOSFET

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =120V,ID =90A RDS(ON)=5.6mΩ , typical @ VGS=10V RDS(ON)=6.9mΩ , typical @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150°C operating temperature.
  • Pb-free lead plating y 100% UIS TESTED! Onl 100% ∆Vds TESTED! DFN 5X6 Use times Top View Bottom View Schematic Diagram heng Package Marking and Ordering Information s Device Marking Device Device Package g P065N12AGU NCEP065N12AGU DFN5X6-8L Reel Size - Tape width -.

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Datasheet Details

Part number NCEP065N12AGU
Manufacturer NCE Power Semiconductor
File Size 379.55 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP065N12AGU Datasheet

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Full PDF Text Transcription

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NCEP065N12AGU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =120V,ID =90A RDS(ON)=5.6mΩ , typical @ VGS=10V RDS(ON)=6.9mΩ , typical @ VGS=4.
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