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NCE8651Q - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • 2.5V Drive.
  • Common-drain type Schematic diagram Pin Assignment.

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Datasheet preview – NCE8651Q

Datasheet Details

Part number NCE8651Q
Manufacturer NCE Power Semiconductor
File Size 338.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE8651Q Datasheet
Additional preview pages of the NCE8651Q datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE8651Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● 2.
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