NCE8601B Datasheet PDF - NCE Power Semiconductor N-Channel Enhancement Mode Power MOSFET Specs

NCE8601B - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protested.

Features

VDS = 30V,ID =8A RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 21mΩ @ VGS=10V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package Schematic diagram Marking and pin Assignment.

Datasheet Details

Part number	NCE8601B
Manufacturer	NCE Power Semiconductor
File Size	319.80 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8601B Datasheet
Additional preview pages of the NCE8601B datasheet.

📁 Similar Datasheet

NCE8098 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE80H11 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE80H11D - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE80H12 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE8205 - N-Channel MOSFETS (JCST)

NCE8580 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE85H15 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE85H15T - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE85H21 - N-Channel Enhancement Mode Power MOSFET (NCE Power)

NCE85H21T - N-Channel Enhancement Mode Power MOSFET (NCE Power)

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE8601B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8601B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protested. General Features ● VDS = 30V,ID =8A RDS(ON) < 26mΩ @ VGS=4.

Published: May 22, 2015 |