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NCE3134 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE3134 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 20V,ID =0.75A RDS(ON).

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Datasheet preview – NCE3134

Datasheet Details

Part number NCE3134
Manufacturer NCE Power Semiconductor
File Size 267.91 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3134 Datasheet
Additional preview pages of the NCE3134 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE3134 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3134 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =0.75A RDS(ON) <380mΩ @ VGS=4.5V RDS(ON) < 450mΩ @ VGS=2.5V RDS(ON) < 800mΩ @ VGS=1.
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