NCE3095G - N-Channel Enhancement Mode Power MOSFET

Description

The NCE3095G uses advanced trench technology and design General

Features

to provide excellent RDS(ON) with low gate charge. It can be.
VDS =30V,ID =95A used in a wide variety of.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE3095G
Manufacturer	NCE Power Semiconductor
File Size	406.75 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3095G Datasheet
Additional preview pages of the NCE3095G datasheet.

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http://www.ncepower.com NCE3095G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3095G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be ● VDS =30V,ID =95A used in a wide variety of applications. RDS(ON)=3.5mΩ (typical) @ VGS=10V Application RDS(ON)=5.3mΩ (typical) @ VGS=4.

Published: Jan 24, 2025 |