NCE02H10T - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE02H10T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =200V,ID =100A RDS(ON).

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NCE02H10T n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE02H10T
Manufacturer	NCE Power Semiconductor
File Size	337.12 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE02H10T Datasheet

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http://www.ncepower.com Pb Free Product NCE02H10T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE02H10T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.