20NP1006S - N and P-Channel Enhancement Mode Power MOSFET

Description

provide excellent RDS(ON) and low gate charge .

high side switch, and for a host of other applications.

Features

N-Channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V.
P-Channel VDS = -20V,ID = -6A RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.
Pb free terminal plating.
RoHS compliant.
Halogen free.

NCE Power Semiconductor

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Datasheet Details

Part number	20NP1006S
Manufacturer	NCE Power Semiconductor
File Size	411.34 KB
Description	N and P-Channel Enhancement Mode Power MOSFET
Datasheet	20NP1006S Datasheet
Additional preview pages of the 20NP1006S datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com NCE20NP1006S N and P-Channel Enhancement Mode Power MOSFET Description The NCE20NP1006S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 20V,ID =10A RDS(ON) < 14mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=2.5V ● P-Channel VDS = -20V,ID = -6A RDS(ON) < 45mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-2.

Published: Nov 5, 2024 |