Datasheet4U Logo Datasheet4U.com

20N06 - N-Channel MOSFET

Key Features

  • Drain Current ID= 20A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Full PDF Text Transcription for 20N06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 20N06. For precise diagrams, and layout, please refer to the original PDF.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resi...

View more extracted text
℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications in power supplies ·Motor controls,high efficient DC to DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 40 W Tj Max.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo 20N06 N-Channel MOSFET ON Semiconductor

More Datasheets from Inchange Semiconductor

Part Number Description
20N10 N-Channel MOSFET
20N15 N-Channel MOSFET
20N45 N-Channel MOSFET