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SLB80R240GT - 800V N-Channel Multi-EPI Super JMOSFET

Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 850V@Tj=150℃ - 18A,800V, RDS(on) =205mΩ@VGS = 10 V - Low gate charge(typ. Qg =46nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D GDS TO-220F G S TO-263 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current.
  • - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current.
  • - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Av.

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Datasheet Details

Part number SLB80R240GT
Manufacturer Msemitek
File Size 1.14 MB
Description 800V N-Channel Multi-EPI Super JMOSFET
Datasheet download datasheet SLB80R240GT Datasheet

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SLF80R240GT/SLB80R240GT SLF80R240GT/SLB80R240GT 800V N-Channel Multi-EPI Super-JMOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies. Features - 850V@Tj=150℃ - 18A,800V, RDS(on) =205mΩ@VGS = 10 V - Low gate charge(typ.
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