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SLB60R075E7D - 60V N-Channel MOSFET

Description

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 50A, 650V@ TJ,max, RDS(on)Typ =64mΩ@VGS = 10 V - Low gate charge(typ. Qg =80nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D D G S TO-263 G D S TO-247 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Aval.

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Datasheet Details

Part number SLB60R075E7D
Manufacturer Msemitek
File Size 1.10 MB
Description 60V N-Channel MOSFET
Datasheet download datasheet SLB60R075E7D Datasheet

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Full PDF Text Transcription

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SLB60R075E7D/SLH60R075E7D SLB60R075E7D / SLH60R075E7D 600V N-Channel Super-JMOSFET General Description This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies. Features - 50A, 650V@ TJ,max, RDS(on)Typ =64mΩ@VGS = 10 V - Low gate charge(typ.
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