MRF581 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Download the MRF581 datasheet PDF. This datasheet also covers the MRF580 variant, as both devices belong to the same high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

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MRF581 high frequency transistor by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MRF580-Motorola.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MRF581
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	282.92 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	MRF581 Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF5811LT1	NPN Silicon High Frequency Transistor
MRF580	HIGH FREQUENCY TRANSISTOR
MRF587	NPN Silicon High Frequency Transistor
MRF5003	N-CHANNEL BROADBAND RF POWER FET
MRF5007	N-CHANNEL BROADBAND RF POWER FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF580 MAXIMUM RATINGS Rating Symbol MRF581 MRF581 Unit Collector-Emitter Voltage vCEO 18 18 Vdc Collector-Base Voltage vCBO 36 36 Vdc Emitter-Base Voltage —Collector Current Continuous vEBO "C 2.5 200 2.5 Vdc 200 mAdc Total Device Dissipation @TC = 50°C(1) Derate above Tq = 50°C PD 2.5 2.5 Watts 25 25 mW/°C Operating and Storage Junction Temperature Range TJ. Tstg -65 to + 150 -65 to + 150 °C (1) Case temperature measured on collector lead immediately adjacent to body of package. CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON MRF581 CASE 317-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage OC = 1.