MRF581 - RF and Microwave Discrete Low Power Power Transistors

Advanced Power Technology

General Description

Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

Key Features

Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X.

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MRF581 rf and microwave discrete low power power transistors by Advanced Power Technology - Datasheet Preview

Datasheet Details

Part number	MRF581
Manufacturer	Advanced Power Technology
File Size	265.54 KB
Description	RF and Microwave Discrete Low Power Power Transistors
Datasheet	MRF581 Datasheet

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MRF581A	RF and Microwave Discrete Low Power Power Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current MRF581 18 30 2.