MRF237 - HIGH FREQUENCY TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MRF237
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	66.84 KB
Description	HIGH FREQUENCY TRANSISTOR
Datasheet	MRF237 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MRF237	Silicon NPN RF Power Transistor	Advanced Semiconductor
MRF234	NPN SILICON RF POWER TRANSISTOR	Advanced Semiconductor
MRF238	NPN SILICON RF POWER TRANSISTOR	Advanced Semiconductor
MRF2001	Microwave Power Transistors	Motorola Semiconductor
MRF2001B	Microwave Power Transistors	Motorola Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MRF230	HIGH FREQUENCY TRANSISTOR
MRF231	(MRF2xx) FM Transistors
MRF232	(MRF2xx) FM Transistors
MRF233	(MRF2xx) FM Transistors
MRF234	(MRF2xx) FM Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 25°C Derate above 25°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol v CEO v CBO VEBO •c PD Tstg Value 18 36 4.0 640 8.0 45.7 - 65 to + 200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C Symbol Rajc Max ' 20 Unit °C/W MRF237 CASE 79-03, STYLE 5 HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 10 mAdc, Bl = 0) Collector-Emitter Breakdown Voltage c(l = 5.0 mAdc, Vbe = 0) Emitter-Base Breakdown Voltage (IE = 1.