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MRF230 - HIGH FREQUENCY TRANSISTOR

Download the MRF230 datasheet PDF. This datasheet also covers the MRF229 variant, as both devices belong to the same high frequency transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF229-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF229 MRF230 MRF229 CASE 79-03, STYLE 5 MRF230 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON f MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C(1) Derate above 25°C Storage Temperature Symbol v CEO VCBO VEBO •c PD Tstg Value 18 36 4.0 0.5 5.0 28.6 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watts mW/X °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rex 35 °C/W (1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as Class C RF Amplifiers. 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.